邱晓燕,博士,教授,博士导师。本科和硕士毕业于西南大学物理星空体育·(StarSky Sports)官方网站, 博士毕业于南京大学固体微结构实验室。重庆市一流课程《力学》课程负责人，教学科普微信公众号《物格致知》管理员，《物理教学探讨》期刊课程资源栏目编辑。主要从事氧化物薄膜忆阻器和杂化钙钛矿薄膜光电特性研究。发表SCI科研论文60余篇, 授权国家发明专利2项，先后主持国家和省部级科研项目9项,Adv. Funct. Mater., Applied Surface Science, Appl. phys. lett., Chinese Phys. Lett.等学术期刊审稿人。
欢迎对新型纳米薄膜光电存储器件与物理感兴趣的同学加入我们研究小组.
联系邮箱：qxy2001@swu.edu.cn
研究工作经历：
2023/07-2023/10 瑞典林雪平大学 物理化学天文系 Senior Visiting Scholar
2017/07-2017/09 香港理工大学应用物理系 Senior Visiting Scholar
2014/07-2014/09 香港理工大学应用物理系 Research Fellow
2012/08-2013/08 美国德州大学圣安东尼奥分校 Visiting Scholar
2006/08-2007/01 香港理工大学应用物理系 Research Assistant
主要研究方向:
1. 氧化物薄膜电荷存储和电阻开关器件研究
2. 有机-无机杂化钙钛矿薄膜光伏性能研究
研究组科研设备
高真空复合磁控溅射系统可物理沉积各类金属和氧化物薄膜；真空手套箱,净化工作台,匀胶机和恒温磁力搅拌加热台等设备可化学制备各类有机薄膜；1200摄氏度高温气氛退火炉；搭建了含Newport 太阳光模拟器, Agilent 4294A高精密阻抗分析仪, Keithley2636B双通道源表，Arc-one忆阻器测试仪和CHI600D电化学分析仪的光电测量系统,可完成对半导体元件电容.电阻.阻抗.光伏等性能表征。
主持的科研项目
1.重庆自然科学面上项目(cstc2019jcyj-msxmX0451)- 适用于人工神经突触的低压稳定多态电阻开关研究, 10万元, 2019.07-2022.07
2.中央高校基本科研业务费重点项目(XDJK2018B034)- 应用于人工神经元的低压高性能电阻开关单元的制备与性能研究, 20万元, 2018.05-2020.12
3.国家自然科学基金面上项目(11274257)-镶嵌金属纳米微粒铪基氧化物薄膜微结构调控的磁电性能,84万元,2013.01-2016.12
4.国家自然科学青年基金项目(10904124)-HfAlOx介电薄膜d0铁磁性与介电性的集成可行性探究, 23万元, 2010.01-2012.12
5.重庆市自然科学基金项目(cstc2014jcyjA40029)-磁性氧化物单相薄膜的制备与阻变特性, 5万元, 2014.07-2017.06
6.中央高校基本科研业务费重点项目(XDJK2014B043)-基于γ-Fe2O3薄膜的磁/电阻变存储器研究, 10万元, 2014.05-2016.05
7.中央高校基本科研业务费专项基金(XDJK2011C038)-非磁氧化物薄膜界面微结构调控的磁电效应, 4万元, 2011.05-2014.05
8.重庆市自然科学基金项目(CSTC2007BB4352)-高介电栅介质材料铪铝酸盐薄膜的制备和界面性质研究, 2万元, 2007.07-2009.07
9.西南大学博士基金项目(SWUB2007007)-高介电常数栅介质材料铪铝酸盐薄膜的制备和界面性质研究, 3万元, 2007.04-2009.04
个人代表性科研论文：
[1] X. Y. Qiu, R. X. Wang, Z. Zhang, M. L. Wei, H. Ji, Y. Chai, F. C. Zhou, J. Y. Dai,T. Zhang, L. T. Li, X. S. Meng, Ultra-low voltage resistive switching of HfO2 buffered (001) epitaxial NiO films deposited on metal seed layers, Appl. Phys. Lett., 2017, 111: 142103
利用磁控溅射方法在金属层上外延生长出氧化物薄膜并获得优良的电阻开关特性
[2] X. Y. Qiu, R.X. Wang, G. Q. Li, T. Zhang, L.T. Li, M.L. Wei, X.S. Meng, H. Ji, Z. Zhang, C.H. Chan, J.Y. Dai, Oxygen-dependent epitaxial growth of Pt (001) thin films on MgO(001) by magnetron sputtering, Appl. Surf. Sci., 2017, 406: 212–217
利用磁控溅射方法在氧化物衬底上制备出高质量的外延金属薄膜
[3] X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, and J.-M. Liu* , Phase separation and interfacial reaction of high-k HfAlOX films prepared by pulsed-laser deposition in oxygen-deficient ambient, Appl. Phys. Lett. 2006, 88: 072906 (SCI引用次数31次)
首次借用相分离概念描述了高温退火过程中伪二元非晶薄膜均匀性的降解.
研究组近年发表的代表性科研论文(按发表时间倒序排列)：
[1] D.K. Chen, Y.S. Xie, T. Chen, T. Zhang, Y.S. Huang and X. Y. Qiu*. Low-temperature water-processed NiO hole transport layers for high-efficiency CH3NH3PbI3 perovskite solar cells. Optical Materials 2024,149:114997
[2] Y.X. Yin, Y.S. Xie, T. Chen, Y. J. Xiang, K. Zhou and X. Y. Qiu*. Pseudo-flexible resistive switching characteristics of nano-bowl-like NiO arrays on mica substrates. Applied Surface Science 2023,613:155994
[3] Y.S. Xie, D. K. Chen, T. Chen, T. Zhang, Y. X. Yin and X. Y. Qiu*. Highly air-stable and efficient CH3NH3PbI3 solar cells enhanced by ZnO-embedded PCBM electron transport layers. Materials Science in Semiconductor Processing 2023,168:107853
[4] Chen Tao, Zhang Tao, Yin Yuan-Xiang, Xie Yu-Sha and Qiu Xiao-Yan*. Tri-level resistive switching characteristics and conductive mechanism of HfO2/NiOx/HfO2 stacks. Acta Physica Sinica 2023, 72:148401
[5] J. B. Wang, Y. X. Yin, Y. Y. Wang, K. Zhou, Y. Zhang, P. Chen and X. Y. Qiu*. Highly air-stable CH3NH3PbI3 solar cells with the solution-processed NiOx hole transport layers. Vacuum 2022,197:110854
[6] X. Jiang, M. L. Wei, C-H Chan, Y. Y. Wang, J. B. Wang, R. L. Lai, J. Y. Dai, and X. Y. Qiu*. Effect of deposition temperature on ultralow voltage resistive switching behavior of Fe-doped SrTiO3 films. Appl. Phys. Lett. 2020,116: 102101
[7] R. L. Lai, M. L.Wei1, J. B. Wang, K. Zhou and X. Y. Qiu*.Temperature dependence of resistive switching characteristics in NiO(111)films on metal layer. J. Phys. D: Appl. Phys. 2020, 54: 015101
[8] Y. Y. Wang, L. T. Li, X. Jiang, J. B. Wang, R. L. Lai, and X. Y. Qiu*. Improved air-stability and low voltage resistive switching behaviors of NiO-buffered CH3NH3PbI3 films prepared by solution method. J. Phys. D: Appl. Phys. 2020, 53: 075101
[9] W. J. Zhai, Y. Z. Xing, Y. Zhang, Y.Y. Wang, L.T. Li, M. L. Wei, X. Jiang, and X. Y. Qiu*. Photovoltaic characteristics of organic-inorganic hybrid perovskite CH3NH3PbI3 solar cell with NiO hole transport layer (in Chinese). Sci Sin-Phys Mech Astron, 2019, 49: 017001
[10] T. Zhang, Z. Zhang, C-H Chan, L. T. Li, M. L. Wei, X. S. Meng, J. Y. Dai, and X. Y. Qiu*. Visible-light enhanced charge storage characteristics of amorphous Ni-doped HfO2 films, J. Phys. D: Appl. Phys. 2018, 51: 305105
[11] X. Y. Qiu, X. S. Meng, H. Mao, Z. H. He, Y. Q. Lin , X. D. Liu, D. C. Li , J. Li*, Magnetic nanoparticles prepared by chemically induced transition: structure and magnetization behaviors, Mater. Chem. Phys. 2018, 204:328 -335
[12] X. Y. Qiu*, R. X. Wang, Z. Zhang, M. L. Wei, H. Ji, Y. Chai, F. C. Zhou, J. Y. Dai,T. Zhang, L. T. Li, X. S. Meng,Ultra-low voltage resistive switching of HfO2 buffered (001) epitaxial NiO films deposited on metal seed layers, Appl. Phys. Lett., 2017, 111: 142103
[13] X. Y. Qiu*, R.X. Wang, G. Q. Li, T. Zhang, L.T. Li, M.L. Wei, X.S. Meng, H. Ji, Z. Zhang, C.H. Chan, J.Y. Dai, Oxygen-dependent epitaxial growth of Pt (001) thin films on MgO(001) by magnetron sputtering, Appl. Surf. Sci., 2017, 406: 212–217
[14] R. X. Wang, T. Zhang, L.T. Li, M. L. Wei, X. S. Meng, X. Y. Qiu* Temperature-dependence of resistive switching behaviors and tunneling mechanism of polycrystalline NiOx films (in Chinese). Chin Sci Bull, 2017, 62: 1–9
[15] X. Y. Qiu*,S. Y. Zhang,T. Zhang, R. X. Wang, L. T. Li, Y. Zhang,J. Y. Dai,Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films,Appl. Phys. A Mater. Sci. Process., 2016, 122:797
[16] H. X. Zhu, T. Zhang, R. X. Wang, Y. Y. Zhang, L. T. Li, and X. Y. Qiu*, Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film, AIP Advances, 2016, 6: 055004
[17] H. X. Zhu, J. Q. Huo, X. Y. Qiu*, Y. Y. Zhang, R. X. Wang, Y. Chen,Chi- Man Wong, Hei-Man Yau, J. Y. Dai, thickness-dependent bipolar resistive switching behaviors of NiOx films, Materials Science Forum, 2016, 847: 131-136
[18] Y.Y Zhang, H X Zhu, H Ji, R.H. Wang, T. Zhang, L. L.Tao, X. Y. Qiu*, Microstructures of epitaxial Pt films on MgO and α-Al2O3 single-crystal substrates deposited by magnetron sputtering (in Chinese). Chin Sci Bull, 2016, 61: 1008 -1015
[19] X. Y. Qiu*, G. D. Zhou, J. Lia, Y. Chen, X.H. Wang, J.Y. Dai,Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate, Thin Solid Films, 2014,562: 674–679
[20] X. Y. Qiu*, J. Li , P. Chen , Y. Zhang , Y. T. Tu , X. H. Wang W. Lu, Post-annealing treatments and interface effects on anomalous magnetic characteristics of HfOx film, Integrated Ferroelectrics, 2013, 141: 145-153
[21] Z. J. Liu, S. Y. Zhang, J. Q. Huo, J. Li, X. Y. Qiu*. Effect of HfOx buffer layer on the resistive switching characteristics of g-Fe2O3 nano-particle films (in Chinese). Sci Sin-Phys Mech Astron, 2014, 44: 417–424.
[22] G. D. Zhou, S. Y. Zhang, Y. T. Tu, J. Li, P. Chen, J. Y. Dai, and X. Y. Qiu*. Anisotropy of Weak Ferromagnetism of HfAlOx Film Deposited by Magnetron Sputtering, Integrated Ferroelectrics, 2012,134: 13-15
[23] X. Y. Qiu, K. C. Chan, P. F. Lee, X. W. Dong and J. Y. Da*, Interfacial microstructure and electrical properties of HfAlOx thin films on compressively strained Si83Ge17 grown by RF magnetron sputtering, Microelectronic Engineering,2009, 86: 2247-2250
[24] X. Y. Qiu，Q. M. Liu, F. Gao, L. Y. Lu, and J.-M. Liu*，Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulse laser deposition，Appl. Phys. Lett. 2006, 89: 242504
[25] X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, and J.-M. Liu*, Phase separation and interfacial reaction of high-k HfAlOX films prepared by pulsed-laser deposition in oxygen-deficient ambient, Appl. Phys. Lett. 2006,88: 072906
[26] X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, Z. G. Liu and J.-M. Liu*, Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition, Appl. Phys. Lett., 2006,88: 182907
[27] X. Y. Qiu, H. W. Liu and J.-M. Liu*, Thermal stability and interfacial properties of ZrAlxSiyOz films prepared by pulse-laser deposition, J. Appl. Phys. Lett., 2006,100: 074109
[28] X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, X. H. Zhou, and J. –M. Liu*, Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition, Appl. Phys. A Mater. Sci. Proc. 2005, 81: 1431-1434
个人获奖情况:
[1] 2021年,第五届重庆市大学生物理创新竞赛(一等奖)指导教师；
[2] 2021年,荣获西南大学第四届教学成果奖三等奖;
[3] 2019年,第四届重庆市大学生物理创新竞赛(二等奖)指导教师；
[4] 2018年,西南大学2016-2018学年度优秀教师；
[5] 2017年,西南大学物理星空体育·(StarSky Sports)官方网站第八届教师教学技能比赛一等奖；
[6] 2016年,西南大学本科生优秀毕业论文(一等奖)指导教师；
[7] 2010年,重庆市自然科学三等奖(排名第四).
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